Does p-type ohmic contact exist in WSe[subscript 2]-metal interfaces?

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of two dimensional WSe[subscript 2] devices. We present the first comparative study of the interfacial properties between monolayer/bilayer (ML/BL) WSe[subscript 2] and Sc,...

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Bibliographic Details
Main Authors: Yang, Ruo Xi (Author), Quhe, Ruge (Author), Zhong, Hongxia (Author), Cong, Linxiao (Author), Ye, Meng (Author), Ni, Zeyuan (Author), Song, Zhigang (Author), Yang, Jinbo (Author), Shi, Junjie (Author), Lu, Jing (Author), Wang, Yangyang (Contributor), Li, Ju (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: Royal Society of Chemistry, 2017-06-20T18:01:03Z.
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