Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks
Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in bot...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2017-04-20T21:10:21Z.
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| Subjects: | |
| Online Access: | Get fulltext |