Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor

Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor

We study the dopant incorporation processes during thin-film fs-laser doping of Si and tailor the dopant distribution through optimization of the fs-laser irradiation conditions. Scanning electron microscopy, transmission electron microscopy, and profilometry are used to study the interrelated dopan...

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Bibliographic Details
Main Authors: Sher, Meng-Ju (Author), Franta, Benjamin (Author), Lin, Yu-Ting (Author), Mazur, Eric (Author), Smith, Matthew J (Contributor), Gradecak, Silvija (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: Springer Berlin Heidelberg, 2017-03-23T22:44:18Z.
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