Modelling hysteresis in vanadium dioxide oscillators

An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to...

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Bibliographic Details
Main Authors: Datta, S. (Author), Maffezzoni, P. (Author), Narayanan, V. (Author), Shukla, N. (Author), Raychowdhury, A. (Author), Daniel, Luca (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2016-05-12T17:32:51Z.
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Online Access:Get fulltext
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700 1 0 |a Narayanan, V.  |e author 
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700 1 0 |a Raychowdhury, A.  |e author 
700 1 0 |a Daniel, Luca  |e author 
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520 |a An original circuit-level model of two-terminal vanadium dioxide electron devices exhibiting electronic hysteresis is presented. Such devices allow realisation of very compact relaxation nano-oscillators that potentially can be used in bio-inspired neurocomputing. The proposed model is exploited to determine the parameters, values that ensure stable periodic oscillations. 
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655 7 |a Article 
773 |t Electronics Letters