Positive-bias temperature instability (PBTI) of GaN MOSFETs

Positive-bias temperature instability (PBTI) of GaN MOSFETs

We have investigated the stability of the gate stack of GaN n-MOSFETs under positive gate stress. Devices with a gate dielectric that consists of pure SiO[subscript 2] or a composite SiO[subscript 2]/Al[subscript 2]O[subscript 3] bilayer were studied. Our research has targeted the evolution of thres...

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Bibliographic Details
Main Authors: Guo, Alex (Contributor), del Alamo, Jesus A. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2016-04-28T16:20:32Z.
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