Characterization of 50 nm MOSFET with dielectric pocket
Characterizat ion of a metal-oxide-semi conductor field effect tran sistor incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE ) is demonstrated by using 2D numerical simulation. An analysis of 120 nm and 50 nm channel length (LJ wit h DP incorp orated between the chann...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Malaysian Institute of Physics,
2007.
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| Subjects: | |
| Online Access: | Get fulltext |