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01217 am a22001933u 4500 |
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6329 |
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|a dc
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|a Lee, S. L.
|e author
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|a Lee, C. K.
|e author
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|a Sinclair, D. C.
|e author
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|a Chong, F. K.
|e author
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|a Halim, S. A.
|e author
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|a Yap, T.
|e author
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|a Preparation and Characterization of New Oxide Ion Conductors in Bi2O3-As2O5 System
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|b Institut Kimia Malaysia,
|c 2005.
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|z Get fulltext
|u http://eprints.utm.my/id/eprint/6329/1/paper_Lee_malaysian_journal2005.pdf
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|a Materials in xBi2O3-As2O5 binary system: 1 < x < 7, were prepared by solid state reaction. XRD shows that single phase materials were formed when x = 5, 5.5, 5.667, 5.75, 6 and 7. The symmetry and space group of the materials were determined. Compositions with 5 < x < 6.25 are solid solutions. Electrical properties of the single phase materials were studied using ac impedance spectroscopy at a frequency range of 10 Hz to 13 MHz. These materials are thermally stable and appear to be oxide ion conductors. Highest conductivity was obtained in Bi23As4O44.5 with s value of 5.66 x 10-5 ohm-1 cm-1, Ea = 0.72 eV at 300oC.
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|a en
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|a QD Chemistry
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