Preparation and Characterization of New Oxide Ion Conductors in Bi2O3-As2O5 System

Materials in xBi2O3-As2O5 binary system: 1 < x < 7, were prepared by solid state reaction. XRD shows that single phase materials were formed when x = 5, 5.5, 5.667, 5.75, 6 and 7. The symmetry and space group of the materials were determined. Compositions with 5 < x < 6.25 are solid solu...

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Bibliographic Details
Main Authors: Lee, S. L. (Author), Lee, C. K. (Author), Sinclair, D. C. (Author), Chong, F. K. (Author), Halim, S. A. (Author), Yap, T. (Author)
Format: Article
Language:English
Published: Institut Kimia Malaysia, 2005.
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Summary:Materials in xBi2O3-As2O5 binary system: 1 < x < 7, were prepared by solid state reaction. XRD shows that single phase materials were formed when x = 5, 5.5, 5.667, 5.75, 6 and 7. The symmetry and space group of the materials were determined. Compositions with 5 < x < 6.25 are solid solutions. Electrical properties of the single phase materials were studied using ac impedance spectroscopy at a frequency range of 10 Hz to 13 MHz. These materials are thermally stable and appear to be oxide ion conductors. Highest conductivity was obtained in Bi23As4O44.5 with s value of 5.66 x 10-5 ohm-1 cm-1, Ea = 0.72 eV at 300oC.