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01543 am a22001813u 4500 |
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56157 |
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|a dc
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|a Islam, Shumaila
|e author
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|a Riaz, Saira
|e author
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|a Abdul Rahman, Rosly
|e author
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|a Naseem, S.
|e author
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|a Ottoman, Zulkafli
|e author
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|a Structural and dielectric properties of boron-doped and un-doped mullite thin films
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|b Springer Netherlands,
|c 2015-05-01.
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|z Get fulltext
|u http://eprints.utm.my/id/eprint/56157/1/ShumailaIslam2015_StructuralandDielectricPropertiesofBoronDopedandUnDoped.pdf
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|a A sol-gel technique being simple, low cost and application oriented has been used to synthesize doped and un-doped mullite sols. These films have been spin-coated onto copper substrates. Effect of boron doping on the transformation kinetics of mullite was studied by preparing two sols with ratio Al/Si/B = 3/1/0 and Al/Si/B = 3/1/0.5. Surface morphology of thermally stable films showed uniformity in doped and un-doped samples. X-ray diffractometer results revealed orthorhombic mullite formation from both sols at a temperature of 500 °C for un-doped and at 350 °C for doped mullite films. Small crystallite size ~11 nm and low dielectric value ~5.84 (at 3 MHz) were observed in boron-doped films. Un-doped mullite films also showed relatively low dielectric constant, ~6.36, as compared to the previously reported values. The stoichiometry of films was confirmed by EDX and spark source mass spectrometry.
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|a en
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|a Q Science (General)
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