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01542 am a22001813u 4500 |
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22857 |
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|a dc
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|a Chek, Desmond C. Y.
|e author
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|a Tan, Michael Loong Peng
|e author
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|a Ahmadi, Mohammad Taghi
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|a Ismail, Razali
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|a Arora, Vijay K.
|e author
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|a Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor
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|b Elsevier BV,
|c 2010-09.
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| 856 |
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|z Get fulltext
|u http://eprints.utm.my/id/eprint/22857/1/DesmondCYChek2010_AnalyticalModelingofHighPerformanceSingleWalled.pdf
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|a We present a novel analytical modeling of a zigzag single-walled semiconducting carbon nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-of-a-potential barrier approach. By implementing multimode carrier transport, we explore and compare the performance of a low- (360 cm2/Vs) and high-mobility (7200 cm2/Vs) CNFET model with experimental data from nanotube and 45 nm MOSFET, respectively, as well as existing compact models. Mobility and carrier concentration models are also developed to obtain a good matching with physical data. For a high mobility CNFET, we found that a maximum of 120 µA is obtained. In addition to this, a CNT-based inverter is also developed by constructing n-type and p-type CNFET in ORCAD's analog behavioral model (ABM). A gain of as high as 5.2 is forecasted for an inverter of 80 nm CNFET.
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|a en
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|a TK Electrical engineering. Electronics Nuclear engineering
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