| Summary: | Polycrystalline In2S3 thin films have been grown on SnO2/glass substrates by chemical bath deposition technique and irradiated at different high gamma doses 3, 7, 15 and 40 kGy. X-ray diffraction, Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS), Spectrophotometer, Photoluminescence and Thermoluminescence were used to investigate physical properties of In2S3 thin films induced by gamma irradiation. After being irradiated, structural properties of In2S3 thin films have shown that preferred orientation has been moved from (4 0 0) plan at 2θ1 = 33.42° to a new created orientation at 2θ2 = 38.06° for 40 kGy gamma dose. EDS analysis has shown that atomic percentage (S/In) has been strongly varied for 40 kGy which indicate significant changes in stoichiometry. Thermoluminescence of irradiated In2S3 thin films has revealed a good sensitivity toward absorbed gamma dose. After irradiation, optical transmittance of In2S3 thin films has been increased from 50% to a maximum value of 70% in the visible range for 15 kGy dose. Band gap energy Eg has been slightly decreased. Other optical parameters such absorption and extinction coefficients, refractive index and permittivity have been determined. These experimental results show that gamma radiations can be used for tuning physical properties of In2S3 thin films for photovoltaic applications. Keywords: Indium sulfide thin films, Chemical bath deposition, High gamma irradiations, Structural, Morphological and optical properties
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