Plasmon-assisted bandgap engineering in dilute nitrides

Plasmon-assisted bandgap engineering in dilute nitrides

The inherent ability of plasmonic bowtie nanoapertures (NAs) to localize the electromagnetic field at a subwavelength scale was exploited to engineer the H removal process in dilute nitrides at the nanometer level. Dilute nitride semiconductor alloys (e.g. GaAsN with a small percentage of nitrogen)...

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Bibliographic Details
Main Authors: Pettinari Giorgio, Labbate Loris Angelo, Sharma Mayank Shekhar, Rubini Silvia, Polimeni Antonio, Felici Marco
Format: Article
Language:English
Published: De Gruyter 2019-04-01
Series:Nanophotonics
Subjects:
plasmonics
bowtie nanoapertures
dilute nitrides
in-plane bandgap engineering
hsq/pmma lift-off
Online Access:https://doi.org/10.1515/nanoph-2019-0025

Internet

https://doi.org/10.1515/nanoph-2019-0025

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