Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET
This paper presents an analytical investigation of the drain current model for symmetric short channel InGaAs gate-all-around (GAA) MOSFETs valid from depletion to strong inversion using a continuous expression. The development of the core model is facilitated by the solution of the quasi-2D Poisson...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0052718 |