Through-hole energy-density threshold of silicon induced by combined millisecond and nanosecond pulsed laser
We report herein the experimental investigation of the through-hole energy-density threshold of silicon irradiated by a double-pulse laser. The double pulse consists of a 1 ms pulse and a time-delayed 5 ns pulse and is referred to as a combined-pulse laser (CPL). A modified level-set method is used...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5024607 |