Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer

• Main Authors: Sunhwa Lee, Seungman Park, Jinjoo Park, Youngkuk Kim, Hyeongsik Park, Juyeun Jang, Chonghoon Shin, Youn-Jung Lee, Seungsin Baek, Minbum Kim, Junhee Jung, Junsin Yi
• Format: Article
• Language: English
• Published: Hindawi Limited 2012-01-01
• Series: International Journal of Photoenergy
• Online Access: http://dx.doi.org/10.1155/2012/767248

We investigated p-i-n type amorphous silicon (a-Si) solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics. The p/i interface of the thin film amorphous silicon solar cells was studied in terms of the coordination number of boron atoms in the p layer. p-type layer and p/i interface properties were obtained from the X-ray photoelectron spectroscopy (XPS) and impedance spectroscopy. One of the solar cells shows open circuit voltage (𝑉oc)=880 mV, short circuit current density (𝐽sc)=14.21 mA/cm2, fill factor (FF)=72.03%, and efficiency (𝜂)=8.8% while the p-type layer was doped with 0.1%. The impedance spectroscopic measurement showed that the diode ideality factor and built-in potential changed with change in diborane flow rate.