Energy Dissipation Pathways in Few-Layer MoS2 Nanoelectromechanical Systems

• Main Authors: Bernard R. Matis, Brian H. Houston, Jeffrey W. Baldwin
• Format: Article
• Language: English
• Published: Nature Publishing Group 2017-07-01
• Series: Scientific Reports
• Online Access: https://doi.org/10.1038/s41598-017-05730-1

Abstract Free standing, atomically thin transition metal dichalcogenides are a new class of ultralightweight nanoelectromechanical systems with potentially game-changing electro- and opto-mechanical properties, however, the energy dissipation pathways that fundamentally limit the performance of these systems is still poorly understood. Here, we identify the dominant energy dissipation pathways in few-layer MoS2 nanoelectromechanical systems. The low temperature quality factors and resonant frequencies are shown to significantly decrease upon heating to 293 K, and we find the temperature dependence of the energy dissipation can be explained when accounting for both intrinsic and extrinsic damping sources. A transition in the dominant dissipation pathways occurs at T ~ 110 K with relatively larger contributions from phonon-phonon and electrostatic interactions for T > 110 K and larger contributions from clamping losses for T < 110 K. We further demonstrate a room temperature thermomechanical-noise-limited force sensitivity of ~8 fN/Hz1/2 that, despite multiple dissipation pathways, remains effectively constant over the course of more than four years. Our results provide insight into the mechanisms limiting the performance of nanoelectromechanical systems derived from few-layer materials, which is vital to the development of next-generation force and mass sensors.