Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS2-Doped Mn

Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS2-Doped Mn

The electronic structure and magnetic properties of manganese- (Mn-) doped bilayer (BL) molybdenum disulfide (MoS2) are studied using the density function theory (DFT) plus on-site Hubbard potential correction (U). The results show that the substitution of Mn at the Mo sites of BL MoS2 is energetica...

Full description

Bibliographic Details
Main Author:	Sintayehu Mekonnen Hailemariam
Format:	Article
Language:	English
Published:	Hindawi Limited 2020-01-01
Series:	Advances in Condensed Matter Physics
Online Access:	http://dx.doi.org/10.1155/2020/9635917

Similar Items

Dopant Introduced Valley Polarization, Spin, and Valley Hall Conductivity in Doped Monolayer MoS2
by: Sintayehu Mekonnen, et al.
Published: (2018-01-01)

Bilayer MoS2 quantum dots with tunable magnetism and spin
by: Hongping Yang, et al.
Published: (2018-11-01)

Growth of ZnS/MoS2 Epitaxial Bilayers
by: Ming-Chen Chou, et al.
Published: (2019)

Strain-shear coupling in bilayer MoS2
by: Jae-Ung Lee, et al.
Published: (2017-11-01)

First principles investigation of structural, electronic, and room temperature ferromagnetism in V doped hexagonal pristine graphene
by: Sintayehu Mekonnen Hailemariam, et al.
Published: (2021-02-01)

Transport and Field Emission Properties of MoS2 Bilayers
by: Francesca Urban, et al.
Published: (2018-03-01)

The optical response of artificially twisted MoS $$_2$$ 2 bilayers
by: M. Grzeszczyk, et al.
Published: (2021-08-01)

Surface Electron Accumulation and Electronic Transport in MoS2 Layer Semiconductors
by: Ming-Deng Siao, et al.
Published: (2017)

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS[subscript 2]
by: Baugher, Britton W. H., et al.
Published: (2014)

Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
by: Joonki Suh, et al.
Published: (2018-01-01)

Atomic Structure and Dynamics of Defects in 2D MoS2 Bilayers
by: Si Zhou, et al.
Published: (2017-07-01)

Investigation of p-type Doping and Surface Passivation on MoS2 Layered Semiconductors
by: Yi-An Liao, et al.
Published: (2019)

Integrated Circuits Based on Bilayer MoS
by: Wang, Han, et al.
Published: (2014)

Scalable high performance radio frequency electronics based on large domain bilayer MoS2
by: Qingguo Gao, et al.
Published: (2018-11-01)

Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping
by: Shichen Fu, et al.
Published: (2020-04-01)

Studies of physical property in MoS2 doped with Mn uses in Lithium/Sodium battery
by: Cheng-Wei Kao, et al.
Published: (2017)

Synthesis and Characterization of M2+ (M = Mn, Co) Doped ZnO Diluted Magnetic Semiconductor Materials
by: Xin-Hong Guo, et al.
Published: (2009)

Synthesis and Characterization of M2+ (M = Mn, Co) Doped ZnO Diluted Magnetic Semiconductor Materials
by: Xin-Hong Guo, et al.
Published: (2009)

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
by: Amritesh Rai, et al.
Published: (2018-08-01)

XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs2 thin films on InP substrates
by: Oomae H., et al.
Published: (2014-07-01)

The study of Co-doped P type and Mn-doped N type GaN Diluted Magnetic Semiconductors
by: 尤隆禹
Published: (2009)

Magnetic Co-Doped MoS2 Nanosheets for Efficient Catalysis of Nitroarene Reduction
by: C. Nethravathi, et al.
Published: (2017-09-01)

Spin Seebeck effect in bipolar magnetic semiconductor: A case of magnetic MoS2 nanotube
by: Guangqian Ding, et al.
Published: (2020-07-01)

A generic tight-binding model for monolayer, bilayer and bulk MoS2
by: Ferdows Zahid, et al.
Published: (2013-05-01)

Analyzing Light-Matter Interaction of Bilayer MoS2 on Patterned Sapphire Substrate
by: Wu, Chun-Chia, et al.
Published: (2016)

Investigation of Ohmic Contacts on MoS2 Layered Semiconductors
by: Hua-Min Wang, et al.
Published: (2018)

Studies of physical property in MoS2 doped with Fe .
by: Hao-Che Kao, et al.
Published: (2017)

Electronic structure and x-ray magnetic circular dichroism in (Ge,Mn)Te diluted magnetic semiconductors
by: V.N. Antonov, et al.
Published: (2010-01-01)

Resonant Spin Flip Raman-Spectroscopy of Electrons and Manganese-Ions in the n-doped Diluted Magnetic Semiconductor (Zn,Mn)Se:Cl
by: Knapp, Alexander Gerhard
Published: (2019)

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites
by: Bijuan Chen, et al.
Published: (2016-11-01)

First Principles Calculation of Electronic Structure of Doped Monolayer MoS<sub>2</sub>
by: FU Chun-ping
Published: (2016-12-01)

Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2
by: Zuocheng Li, et al.
Published: (2017-08-01)

The Transition From MoS2 Single-Layer to Bilayer Growth on the Au(111) Surface
by: Moritz Ewert, et al.
Published: (2021-06-01)

Theoretical study of dilute magnetic semiconductors : Properties of (Ga,Mn)As
by: Staneva, Maya
Published: (2010)

Study of Luminescence Properties in Doped MoSe2 and MoS2 Quantum Dots
by: Shao-Yen Tsao, et al.
Published: (2019)

Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution
by: Yimin Jiang, et al.
Published: (2021-08-01)

High-Frequency Time-Resolved Photoconduction in MoS2 and MoSe2 Layer Semiconductors
by: Chin-Jung Ho, et al.
Published: (2019)

The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting
by: Ye Yuan, et al.
Published: (2021-07-01)

Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate
by: Ahn, H.-S, et al.
Published: (2022)

Enhanced room temperature ferromagnetism in MoS2 by N plasma treatment
by: Bao Wang, et al.
Published: (2020-01-01)

Cannot write session to /tmp/vufind_sessions/sess_jv793lr55hesr7qiufhnh1sav7