Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch

Microbolometer array sensors with fine pitch pixel arrays have been implemented using amorphous silicon supported by two contact pads. Simple beam test structures were fabricated and characterized for the purpose of designing a focal plane with geometrical flatness. As the beam length decreased, the...

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Main Authors: Hee Yeoun Kim, Kyoung Min Kim, Byeong Il Kim, Won Soo Jang, Tae Hyun Kim, Tai Young Kang
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2011-04-01
Series:Sensors & Transducers
Subjects:
Online Access:http://www.sensorsportal.com/HTML/DIGEST/P_SI_150.htm
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spelling doaj-fb40d70094b847f2a4c6899d096d87d82020-11-24T23:23:58ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792011-04-0111Special Issue5663Mechanical Robustness of FPA in a-Si Microbolometer with Fine PitchHee Yeoun Kim0Kyoung Min Kim1Byeong Il Kim2Won Soo Jang3Tae Hyun Kim4Tai Young Kang5National Nanofab Center (NNFC), 335 Gwahangro, Yuseoung-gu, Daejeon, Korea,National Nanofab Center (NNFC), 335 Gwahangro, Yuseoung-gu, Daejeon, Korea,National Nanofab Center (NNFC), 335 Gwahangro, Yuseoung-gu, Daejeon, Korea,OCAS Co., Korea, 1271-11, Gyunggi Technopark 409, KoreaOCAS Co., Korea, 1271-11, Gyunggi Technopark 409, KoreaOCAS Co., Korea, 1271-11, Gyunggi Technopark 409, KoreaMicrobolometer array sensors with fine pitch pixel arrays have been implemented using amorphous silicon supported by two contact pads. Simple beam test structures were fabricated and characterized for the purpose of designing a focal plane with geometrical flatness. As the beam length decreased, the effect of beam width on the bending was minimized. Membrane deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The tilting deformation was caused by the misalign effect of contact pad and confirmed by FEA (Finite Element Analysis) simulation results. The electro-optical properties of bolometer have been measured to be noise equivalent temperature difference (NETD) = 145 mK, temperature Coefficient of Resistance (TCR) = −2 %/K, and thermal time constant = 1.99 ms. http://www.sensorsportal.com/HTML/DIGEST/P_SI_150.htmMicrobolometerAmorphous siliconIR sensorResidual stress
collection DOAJ
language English
format Article
sources DOAJ
author Hee Yeoun Kim
Kyoung Min Kim
Byeong Il Kim
Won Soo Jang
Tae Hyun Kim
Tai Young Kang
spellingShingle Hee Yeoun Kim
Kyoung Min Kim
Byeong Il Kim
Won Soo Jang
Tae Hyun Kim
Tai Young Kang
Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch
Sensors & Transducers
Microbolometer
Amorphous silicon
IR sensor
Residual stress
author_facet Hee Yeoun Kim
Kyoung Min Kim
Byeong Il Kim
Won Soo Jang
Tae Hyun Kim
Tai Young Kang
author_sort Hee Yeoun Kim
title Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch
title_short Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch
title_full Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch
title_fullStr Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch
title_full_unstemmed Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch
title_sort mechanical robustness of fpa in a-si microbolometer with fine pitch
publisher IFSA Publishing, S.L.
series Sensors & Transducers
issn 2306-8515
1726-5479
publishDate 2011-04-01
description Microbolometer array sensors with fine pitch pixel arrays have been implemented using amorphous silicon supported by two contact pads. Simple beam test structures were fabricated and characterized for the purpose of designing a focal plane with geometrical flatness. As the beam length decreased, the effect of beam width on the bending was minimized. Membrane deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The tilting deformation was caused by the misalign effect of contact pad and confirmed by FEA (Finite Element Analysis) simulation results. The electro-optical properties of bolometer have been measured to be noise equivalent temperature difference (NETD) = 145 mK, temperature Coefficient of Resistance (TCR) = −2 %/K, and thermal time constant = 1.99 ms.
topic Microbolometer
Amorphous silicon
IR sensor
Residual stress
url http://www.sensorsportal.com/HTML/DIGEST/P_SI_150.htm
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