Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch
Microbolometer array sensors with fine pitch pixel arrays have been implemented using amorphous silicon supported by two contact pads. Simple beam test structures were fabricated and characterized for the purpose of designing a focal plane with geometrical flatness. As the beam length decreased, the...
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doaj-fb40d70094b847f2a4c6899d096d87d82020-11-24T23:23:58ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792011-04-0111Special Issue5663Mechanical Robustness of FPA in a-Si Microbolometer with Fine PitchHee Yeoun Kim0Kyoung Min Kim1Byeong Il Kim2Won Soo Jang3Tae Hyun Kim4Tai Young Kang5National Nanofab Center (NNFC), 335 Gwahangro, Yuseoung-gu, Daejeon, Korea,National Nanofab Center (NNFC), 335 Gwahangro, Yuseoung-gu, Daejeon, Korea,National Nanofab Center (NNFC), 335 Gwahangro, Yuseoung-gu, Daejeon, Korea,OCAS Co., Korea, 1271-11, Gyunggi Technopark 409, KoreaOCAS Co., Korea, 1271-11, Gyunggi Technopark 409, KoreaOCAS Co., Korea, 1271-11, Gyunggi Technopark 409, KoreaMicrobolometer array sensors with fine pitch pixel arrays have been implemented using amorphous silicon supported by two contact pads. Simple beam test structures were fabricated and characterized for the purpose of designing a focal plane with geometrical flatness. As the beam length decreased, the effect of beam width on the bending was minimized. Membrane deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The tilting deformation was caused by the misalign effect of contact pad and confirmed by FEA (Finite Element Analysis) simulation results. The electro-optical properties of bolometer have been measured to be noise equivalent temperature difference (NETD) = 145 mK, temperature Coefficient of Resistance (TCR) = −2 %/K, and thermal time constant = 1.99 ms. http://www.sensorsportal.com/HTML/DIGEST/P_SI_150.htmMicrobolometerAmorphous siliconIR sensorResidual stress |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hee Yeoun Kim Kyoung Min Kim Byeong Il Kim Won Soo Jang Tae Hyun Kim Tai Young Kang |
spellingShingle |
Hee Yeoun Kim Kyoung Min Kim Byeong Il Kim Won Soo Jang Tae Hyun Kim Tai Young Kang Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch Sensors & Transducers Microbolometer Amorphous silicon IR sensor Residual stress |
author_facet |
Hee Yeoun Kim Kyoung Min Kim Byeong Il Kim Won Soo Jang Tae Hyun Kim Tai Young Kang |
author_sort |
Hee Yeoun Kim |
title |
Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch |
title_short |
Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch |
title_full |
Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch |
title_fullStr |
Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch |
title_full_unstemmed |
Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch |
title_sort |
mechanical robustness of fpa in a-si microbolometer with fine pitch |
publisher |
IFSA Publishing, S.L. |
series |
Sensors & Transducers |
issn |
2306-8515 1726-5479 |
publishDate |
2011-04-01 |
description |
Microbolometer array sensors with fine pitch pixel arrays have been implemented using amorphous silicon supported by two contact pads. Simple beam test structures were fabricated and characterized for the purpose of designing a focal plane with geometrical flatness. As the beam length decreased, the effect of beam width on the bending was minimized. Membrane deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The tilting deformation was caused by the misalign effect of contact pad and confirmed by FEA (Finite Element Analysis) simulation results. The electro-optical properties of bolometer have been measured to be noise equivalent temperature difference (NETD) = 145 mK, temperature Coefficient of Resistance (TCR) = −2 %/K, and thermal time constant = 1.99 ms.
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topic |
Microbolometer Amorphous silicon IR sensor Residual stress |
url |
http://www.sensorsportal.com/HTML/DIGEST/P_SI_150.htm |
work_keys_str_mv |
AT heeyeounkim mechanicalrobustnessoffpainasimicrobolometerwithfinepitch AT kyoungminkim mechanicalrobustnessoffpainasimicrobolometerwithfinepitch AT byeongilkim mechanicalrobustnessoffpainasimicrobolometerwithfinepitch AT wonsoojang mechanicalrobustnessoffpainasimicrobolometerwithfinepitch AT taehyunkim mechanicalrobustnessoffpainasimicrobolometerwithfinepitch AT taiyoungkang mechanicalrobustnessoffpainasimicrobolometerwithfinepitch |
_version_ |
1725562652168552448 |