Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2

Abstract Recently, it has been known that the hidden Rashba (R-2) effect in two-dimensional materials gives rise to a physical phenomenon called spin-layer locking (SLL). However, not only its underlying fundamental mechanism has been unclear, but also there are only a few materials exhibiting weak...

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Main Authors: Seungjun Lee, Young-Kyun Kwon
Format: Article
Language:English
Published: Nature Publishing Group 2020-12-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-020-00180-2
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spelling doaj-fae708e6a6a643f0bad5f34ed3e72b7e2021-04-02T18:56:06ZengNature Publishing Groupnpj 2D Materials and Applications2397-71322020-12-01411710.1038/s41699-020-00180-2Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2Seungjun Lee0Young-Kyun Kwon1Department of Physics and Research Institute for Basic Sciences, Kyung Hee UniversityDepartment of Physics and Research Institute for Basic Sciences, Kyung Hee UniversityAbstract Recently, it has been known that the hidden Rashba (R-2) effect in two-dimensional materials gives rise to a physical phenomenon called spin-layer locking (SLL). However, not only its underlying fundamental mechanism has been unclear, but also there are only a few materials exhibiting weak SLL. Here, through the first-principles density functional theory and model Hamiltonian calculation, we reveal that the R-2 SLL can be determined by the competition between the sublayer–sublayer interaction and the spin–orbit coupling, which is related to the Rashba strength. In addition, the orbital angular momentum distribution is another crucial point to realize the strong R-2 SLL. We propose that a 2D material Si2Bi2 possesses an ideal condition for the strong R-2 SLL, whose Rashba strength is evaluated to be 2.16 eVÅ, which is the greatest value ever observed in 2D R-2 materials to the best of our knowledge. Furthermore, we reveal that the interlayer interaction in a bilayer structure ensures R-2 states spatially farther apart, implying a potential application in spintronics.https://doi.org/10.1038/s41699-020-00180-2
collection DOAJ
language English
format Article
sources DOAJ
author Seungjun Lee
Young-Kyun Kwon
spellingShingle Seungjun Lee
Young-Kyun Kwon
Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2
npj 2D Materials and Applications
author_facet Seungjun Lee
Young-Kyun Kwon
author_sort Seungjun Lee
title Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2
title_short Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2
title_full Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2
title_fullStr Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2
title_full_unstemmed Unveiling giant hidden Rashba effects in two-dimensional Si2Bi2
title_sort unveiling giant hidden rashba effects in two-dimensional si2bi2
publisher Nature Publishing Group
series npj 2D Materials and Applications
issn 2397-7132
publishDate 2020-12-01
description Abstract Recently, it has been known that the hidden Rashba (R-2) effect in two-dimensional materials gives rise to a physical phenomenon called spin-layer locking (SLL). However, not only its underlying fundamental mechanism has been unclear, but also there are only a few materials exhibiting weak SLL. Here, through the first-principles density functional theory and model Hamiltonian calculation, we reveal that the R-2 SLL can be determined by the competition between the sublayer–sublayer interaction and the spin–orbit coupling, which is related to the Rashba strength. In addition, the orbital angular momentum distribution is another crucial point to realize the strong R-2 SLL. We propose that a 2D material Si2Bi2 possesses an ideal condition for the strong R-2 SLL, whose Rashba strength is evaluated to be 2.16 eVÅ, which is the greatest value ever observed in 2D R-2 materials to the best of our knowledge. Furthermore, we reveal that the interlayer interaction in a bilayer structure ensures R-2 states spatially farther apart, implying a potential application in spintronics.
url https://doi.org/10.1038/s41699-020-00180-2
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