A New Approach for Approximate Solution of ADE: Physical-Based Modeling of Carriers in Doping Region

A New Approach for Approximate Solution of ADE: Physical-Based Modeling of Carriers in Doping Region

The electric behavior in semiconductor devices is the result of the electric carriers’ injection and evacuation in the low doping region, <i>N-.</i> The carrier’s dynamic is determined by the ambipolar diffusion equation (ADE), which involves the main physical phenomena in the low doping...

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Bibliographic Details
Main Authors: Leobardo Hernandez-Gonzalez, Jazmin Ramirez-Hernandez, Oswaldo Ulises Juarez-Sandoval, Miguel Angel Olivares-Robles, Ramon Blanco Sanchez, Rosario del Pilar Gibert Delgado
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Mathematics
Subjects:
physical modeling
silicon carbide
simulation semiconductor
Online Access:https://www.mdpi.com/2227-7390/9/5/458

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