Study of Power Loss Reduction in SEPR Converters for Induction Heating through Implementation of SiC Based Semiconductor Switches
This paper presents a power loss analysis for a Single Ended Parallel Resonance (SEPR) Converter used for induction heating. The analysis includes a comparison of the losses in the electronic switch when the circuit is realized using a conventional Silicon (Si) based IGBT or when using Silicon...
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| Format: | Article |
| Language: | English |
| Published: |
UIKTEN
2014-08-01
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| Series: | TEM Journal |
| Online Access: | http://www.temjournal.com/documents/vol3no3/Study%20of%20Power%20Loss%20Reduction%20in%20SEPR%20Converters%20for%20Induction%20Heating%20through%20Implementation%20of%20SiC%20Based%20Semiconductor%20Switches.pdf |
| Summary: | This paper presents a power loss analysis
for a Single Ended Parallel Resonance (SEPR)
Converter used for induction heating. The analysis
includes a comparison of the losses in the electronic
switch when the circuit is realized using a conventional
Silicon (Si) based IGBT or when using Silicon Carbide
(SiC) based MOSFET. The analysis includes modelling
and simulation as well as experimental verification
through power loss and heat dissipation measurement.
The presented results can be used as a base of
comparison between the switches and can be a starting
point for efficiency based design of those types of
converters. |
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| ISSN: | 2217-8309 2217-8333 |