Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B film...

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Bibliographic Details
Main Author: Fu-Chien Chiu
Format: Article
Language:English
Published: MDPI AG 2014-11-01
Series:Materials
Subjects:
boron doped zinc oxide
resistance switching
conduction mechanism
trap spacing
trap energy level
Online Access:http://www.mdpi.com/1996-1944/7/11/7339

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http://www.mdpi.com/1996-1944/7/11/7339

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