Structural Evolution and Photoluminescence of SiO2 Layers with Sn Nanoclusters Formed by Ion Implantation
Samples of SiO2 (600 nm)/Si have been implanted with Sn ions (200 keV, 5×1016 cm−2 and 1×1017 cm−2) at room temperature and afterwards annealed at 800 and 900°C for 60 minutes in ambient air. The structural and light emission properties of “SiO2+Sn-based nanocluster” composites have been studied usi...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2019-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2019/9486745 |