Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must...

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Bibliographic Details
Main Authors:	Wenyuan Jiao, Wei Kong, Jincheng Li, Kristen Collar, Tong-Ho Kim, Maria Losurdo, April S. Brown
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-03-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4944502

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