The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)

The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)

Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related E...

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Main Author: Yuanlong Chen
Format: Article
Language:English
Published: EDP Sciences 2020-01-01
Series:E3S Web of Conferences
Online Access:https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/58/e3sconf_isceg2020_01025.pdf
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spelling doaj-f8182c9cca124b749599961344d686522021-04-02T16:42:07ZengEDP SciencesE3S Web of Conferences2267-12422020-01-011980102510.1051/e3sconf/202019801025e3sconf_isceg2020_01025The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)Yuanlong Chen0Leeds Joint School, Southwest Jiao Tong UniversityRecently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/58/e3sconf_isceg2020_01025.pdf
collection DOAJ
language English
format Article
sources DOAJ
author Yuanlong Chen
spellingShingle Yuanlong Chen
The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)
E3S Web of Conferences
author_facet Yuanlong Chen
author_sort Yuanlong Chen
title The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)
title_short The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)
title_full The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)
title_fullStr The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)
title_full_unstemmed The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride)
title_sort optimizations of mosfet contents in ee undergraduate course by using the third generation semiconductor (gallium nitride)
publisher EDP Sciences
series E3S Web of Conferences
issn 2267-1242
publishDate 2020-01-01
description Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity. And another reason is the MOSFET with Gallium Nitride applied in power switching. However, transistors-related EE major (Electronic and Electrical engineering) courses are still focusing on the old silicon-based transistors, which own many deficiencies. In this paper, the current status of Gallium Nitride based MOSFET is investigated. Besides, a comparison in conducting capability, sensitivity and power efficiency between the MOSFET IRF510 and the Gallium Nitride based product GS-065-008-1-L is carried out. After the comparison, the application of MOSFET in EE courses is suggested and the priorities and difficulties are discussed as well.
url https://www.e3s-conferences.org/articles/e3sconf/pdf/2020/58/e3sconf_isceg2020_01025.pdf
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