Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process, the applied T-gate process shows a technique for...

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Bibliographic Details
Main Authors: Min Su Cho, Jae Hwa Seo, Sang Ho Lee, Hwan Soo Jang, In Man Kang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
FinFET
Gallium compounds
nanofabrication
nanolithography
high electron mobility transistor
T-gate
Online Access:https://ieeexplore.ieee.org/document/9146151/
Description
Summary:To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process, the applied T-gate process shows a technique for forming a T-gate using the reactivity difference of several photoresists. The fabricated device has a steep fin width (W<sub>fin</sub>) of 130 nm, a fin height (H<sub>fin</sub>) of 250 nm, and a gate length (L<sub>G</sub>) of 190 nm. The device exhibits a low leakage current (I<sub>off</sub>) of 6.6 &#x00D7; 10<sup>-10</sup> A/mm and a high I<sub>on</sub>/I<sub>off</sub> current ratio of 4.7 &#x00D7; 10<sup>8</sup>. Moreover, the fabricated device achieved a high cut-off frequency (f<sub>T</sub>) of 9.7 GHz and a very high maximum oscillation frequency (f<sub>max</sub>) of 27.8 GHz. The f<sub>max</sub> value of the proposed device is 138% higher than that of GaN-based fin-type HEMTs without T-gate.
ISSN:2169-3536

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