Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films

Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O<sub>2</sub>) was reported. Red-shift of &#955;<sub>ENZ</sub> (Epsilon-Near-Zero wavelength) from 1422...

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Main Authors: Jiqing Lian, Dawei Zhang, Ruijin Hong, Peizhen Qiu, Taiguo Lv, Daohua Zhang
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Nanomaterials
Subjects:
ITO thin films
Epsilon-Near-Zero
defect
optical modulation
Online Access:https://www.mdpi.com/2079-4991/8/11/922
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spelling doaj-f6c6bb1983c04c58b4c01dbec446e44c2020-11-25T00:54:56ZengMDPI AGNanomaterials2079-49912018-11-0181192210.3390/nano8110922nano8110922Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin FilmsJiqing Lian0Dawei Zhang1Ruijin Hong2Peizhen Qiu3Taiguo Lv4Daohua Zhang5Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, ChinaEngineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, ChinaEngineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, ChinaEngineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, ChinaEngineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, ChinaSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, SingaporeDefect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O<sub>2</sub>) was reported. Red-shift of &#955;<sub>ENZ</sub> (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (E<sub>g</sub>) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.https://www.mdpi.com/2079-4991/8/11/922ITO thin filmsEpsilon-Near-Zerodefectoptical modulation
collection DOAJ
language English
format Article
sources DOAJ
author Jiqing Lian
Dawei Zhang
Ruijin Hong
Peizhen Qiu
Taiguo Lv
Daohua Zhang
spellingShingle Jiqing Lian
Dawei Zhang
Ruijin Hong
Peizhen Qiu
Taiguo Lv
Daohua Zhang
Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
Nanomaterials
ITO thin films
Epsilon-Near-Zero
defect
optical modulation
author_facet Jiqing Lian
Dawei Zhang
Ruijin Hong
Peizhen Qiu
Taiguo Lv
Daohua Zhang
author_sort Jiqing Lian
title Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
title_short Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
title_full Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
title_fullStr Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
title_full_unstemmed Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
title_sort defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2018-11-01
description Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O<sub>2</sub>) was reported. Red-shift of &#955;<sub>ENZ</sub> (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (E<sub>g</sub>) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.
topic ITO thin films
Epsilon-Near-Zero
defect
optical modulation
url https://www.mdpi.com/2079-4991/8/11/922
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AT ruijinhong defectinducedtunablepermittivityofepsilonnearzeroinindiumtinoxidethinfilms
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