Low doses effect in GaP light-emitting diodes
The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 1012 cm–2). It was stated that radiation features of p-n-junction and its capacitance change in dependence on temperature. The capacit...
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2016-07-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
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| Online Access: | http://journal-spqeo.org.ua/n2_2016/P183-187abstr.html |