Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors
Thick film glaze resistors have been prepared using V2O5 doped RuO2 conducting phase. Different amounts of V2O5 were incorporated into RuO2lattice by solid state reaction. Sheet resistivity decreased from 235 to 10 kΩ/Sq, with the increase in the dopant concentration from 2 to 6% wt. The conductivit...
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Hindawi Limited
1986-01-01
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| Series: | Active and Passive Electronic Components |
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| Online Access: | http://dx.doi.org/10.1155/1986/34249 |
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doaj-f69a4be06e7e47d9816eb0e6b91d7a1d2020-11-24T23:49:21ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50311986-01-0112211111710.1155/1986/34249Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film ResistorsM. S. Setty0R. F. Shinde1Thick Film Materials, Physical Chemistry Division, National Chemical Laboratory, Pune 411 008, IndiaThick Film Materials, Physical Chemistry Division, National Chemical Laboratory, Pune 411 008, IndiaThick film glaze resistors have been prepared using V2O5 doped RuO2 conducting phase. Different amounts of V2O5 were incorporated into RuO2lattice by solid state reaction. Sheet resistivity decreased from 235 to 10 kΩ/Sq, with the increase in the dopant concentration from 2 to 6% wt. The conductivity, ‘σ’, was found to fit in the equation σ= KS(l-S), where S is the probability that a given cationic site will contain an extra charge carrier and K = 10-3 mho-sq.http://dx.doi.org/10.1155/1986/34249Thick filmresistorsruthenium dioxidedoping. |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
M. S. Setty R. F. Shinde |
| spellingShingle |
M. S. Setty R. F. Shinde Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors Active and Passive Electronic Components Thick film resistors ruthenium dioxide doping. |
| author_facet |
M. S. Setty R. F. Shinde |
| author_sort |
M. S. Setty |
| title |
Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors |
| title_short |
Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors |
| title_full |
Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors |
| title_fullStr |
Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors |
| title_full_unstemmed |
Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors |
| title_sort |
effect of v2o5 dopant on the electrical conductivity of ruo2 thick film resistors |
| publisher |
Hindawi Limited |
| series |
Active and Passive Electronic Components |
| issn |
0882-7516 1563-5031 |
| publishDate |
1986-01-01 |
| description |
Thick film glaze resistors have been prepared using V2O5 doped RuO2 conducting phase. Different amounts of V2O5 were incorporated into RuO2lattice by solid state reaction. Sheet resistivity decreased from 235 to 10 kΩ/Sq, with the increase in the dopant concentration from 2 to 6% wt. The conductivity, ‘σ’, was found to fit
in the equation σ= KS(l-S), where S is the probability that a given cationic site will contain an extra charge
carrier and K = 10-3 mho-sq. |
| topic |
Thick film resistors ruthenium dioxide doping. |
| url |
http://dx.doi.org/10.1155/1986/34249 |
| work_keys_str_mv |
AT mssetty effectofv2o5dopantontheelectricalconductivityofruo2thickfilmresistors AT rfshinde effectofv2o5dopantontheelectricalconductivityofruo2thickfilmresistors |
| _version_ |
1725482784937476096 |