Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and...
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2015-11-01
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Online Access: | http://dx.doi.org/10.1063/1.4936765 |
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doaj-f694b4a384374b95955c3161d063d4b02020-11-24T23:53:19ZengAIP Publishing LLCAIP Advances2158-32262015-11-01511117150117150-610.1063/1.4936765087511ADVInfluence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative studyRam Sevak Singh0Department of Physics, National Institute of TechnologyKurukshetra 136119 (Haryana), IndiaInfluence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.http://dx.doi.org/10.1063/1.4936765 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Ram Sevak Singh |
spellingShingle |
Ram Sevak Singh Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study AIP Advances |
author_facet |
Ram Sevak Singh |
author_sort |
Ram Sevak Singh |
title |
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study |
title_short |
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study |
title_full |
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study |
title_fullStr |
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study |
title_full_unstemmed |
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study |
title_sort |
influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: a comparative study |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2015-11-01 |
description |
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices. |
url |
http://dx.doi.org/10.1063/1.4936765 |
work_keys_str_mv |
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