Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and...

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Main Author: Ram Sevak Singh
Format: Article
Language:English
Published: AIP Publishing LLC 2015-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4936765
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spelling doaj-f694b4a384374b95955c3161d063d4b02020-11-24T23:53:19ZengAIP Publishing LLCAIP Advances2158-32262015-11-01511117150117150-610.1063/1.4936765087511ADVInfluence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative studyRam Sevak Singh0Department of Physics, National Institute of TechnologyKurukshetra 136119 (Haryana), IndiaInfluence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.http://dx.doi.org/10.1063/1.4936765
collection DOAJ
language English
format Article
sources DOAJ
author Ram Sevak Singh
spellingShingle Ram Sevak Singh
Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study
AIP Advances
author_facet Ram Sevak Singh
author_sort Ram Sevak Singh
title Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study
title_short Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study
title_full Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study
title_fullStr Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study
title_full_unstemmed Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study
title_sort influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: a comparative study
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-11-01
description Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.
url http://dx.doi.org/10.1063/1.4936765
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