Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films
Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400–800 °C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visib...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2017-10-01
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Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/7/10/311 |