Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films

Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400–800 °C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visib...

Full description

Bibliographic Details
Main Authors: Ranran Fan, Fei Lu, Kaikai Li
Format: Article
Language:English
Published: MDPI AG 2017-10-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/7/10/311