Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions
The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-11-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/12/22/3713 |
| Summary: | The high reliability of electroplating through silicon vias (TSVs) is an attractive hotspot in the application of high-density integrated circuit packaging. In this paper, improvements for fully filled TSVs by optimizing sputtering and electroplating conditions were introduced. Particular attention was paid to the samples with different seed layer structures. These samples were fabricated by different sputtering and treatment approaches, and accompanied with various electroplating profile adjustments. The images were observed and characterized by X-ray equipment and a scanning electron microscope (SEM). The results show that optimized sputtering and electroplating conditions can help improve the quality of TSVs, which could be interpreted as the interface effect of the TSV structure. |
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| ISSN: | 1996-1944 |