Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
<p>Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated a...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2019-07-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3832 |