Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals

Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals

<p>Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated a...

Full description

Bibliographic Details
Main Authors: S. Solodin, Ye. Nikoniuk, G. Rarenko, P. Fochuk
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2019-07-01
Series:Фізика і хімія твердого тіла
Subjects:
cd1-xmnxte
тверді розчини
електричні властивості
ефект холла
германій
Online Access:http://journals.pu.if.ua/index.php/pcss/article/view/3832
id doaj-f6270d5335184e059c241eecb05dff30
record_format Article
spelling doaj-f6270d5335184e059c241eecb05dff302020-11-25T01:58:33ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892019-07-0120214414810.15330/pcss.20.2.144-1483213Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystalsS. Solodin0Ye. Nikoniuk1G. Rarenko2P. Fochuk3Чернівецький національний університет ім. Юрія ФедьковичаNational University of Water Management and Nature ResourcesЧернівецький національний університет ім. Юрія ФедьковичаЧернівецький національний університет ім. Юрія Федьковича<p>Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (ε<sub>A</sub>) was increased with the content Mn (x) according to the relation ε<sub>A</sub> = 0.6 (1 + 2х) eV. At 300 K: ρ = (10<sup>8</sup>-10<sup>9</sup>) (Ohm´cm), R<sub>H</sub> = (5×10<sup>9</sup>-5×10<sup>10</sup>) cm<sup>3</sup>/C; mobility of current carriers ~ 50 cm<sup>2</sup>/(V´s).</p>http://journals.pu.if.ua/index.php/pcss/article/view/3832cd1-xmnxteтверді розчиниелектричні властивостіефект холлагерманій
collection DOAJ
language English
format Article
sources DOAJ
author S. Solodin
Ye. Nikoniuk
G. Rarenko
P. Fochuk
spellingShingle S. Solodin
Ye. Nikoniuk
G. Rarenko
P. Fochuk
Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
Фізика і хімія твердого тіла
cd1-xmnxte
тверді розчини
електричні властивості
ефект холла
германій
author_facet S. Solodin
Ye. Nikoniuk
G. Rarenko
P. Fochuk
author_sort S. Solodin
title Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
title_short Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
title_full Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
title_fullStr Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
title_full_unstemmed Electro-physical properties of Ge-doped Cd1-xMnxTe (x <0,1) crystals
title_sort electro-physical properties of ge-doped cd1-xmnxte (x <0,1) crystals
publisher Vasyl Stefanyk Precarpathian National University
series Фізика і хімія твердого тіла
issn 1729-4428
2309-8589
publishDate 2019-07-01
description <p>Ge-doped Cd<sub>1-x</sub>Mn<sub>x</sub>Te (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280-420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (ε<sub>A</sub>) was increased with the content Mn (x) according to the relation ε<sub>A</sub> = 0.6 (1 + 2х) eV. At 300 K: ρ = (10<sup>8</sup>-10<sup>9</sup>) (Ohm´cm), R<sub>H</sub> = (5×10<sup>9</sup>-5×10<sup>10</sup>) cm<sup>3</sup>/C; mobility of current carriers ~ 50 cm<sup>2</sup>/(V´s).</p>
topic cd1-xmnxte
тверді розчини
електричні властивості
ефект холла
германій
url http://journals.pu.if.ua/index.php/pcss/article/view/3832
work_keys_str_mv AT ssolodin electrophysicalpropertiesofgedopedcd1xmnxtex01crystals
AT yenikoniuk electrophysicalpropertiesofgedopedcd1xmnxtex01crystals
AT grarenko electrophysicalpropertiesofgedopedcd1xmnxtex01crystals
AT pfochuk electrophysicalpropertiesofgedopedcd1xmnxtex01crystals
_version_ 1724969010373591040

Similar Items