Novel Floating General Element Simulators Using CBTA

In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor d...

Full description

Bibliographic Details
Main Authors: U. E. Ayten, M. Sagbas, N. Herencsar, J. Koton
Format: Article
Language:English
Published: Spolecnost pro radioelektronicke inzenyrstvi 2012-04-01
Series:Radioengineering
Subjects:
Online Access:http://www.radioeng.cz/fulltexts/2012/12_01_0011_0019.pdf
id doaj-f61bd07b90b54cbebd1714fa1a9575cb
record_format Article
spelling doaj-f61bd07b90b54cbebd1714fa1a9575cb2020-11-25T00:50:31ZengSpolecnost pro radioelektronicke inzenyrstviRadioengineering1210-25122012-04-012111119Novel Floating General Element Simulators Using CBTAU. E. AytenM. SagbasN. HerencsarJ. KotonIn this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using PSPICE simulation for 0.25 μm, level 7, TSMC CMOS technology parameters.www.radioeng.cz/fulltexts/2012/12_01_0011_0019.pdfFrequency dependent negative resistor (FDNR)floating inductorcapacitance multiplierfloating element simulator circuitcurrent backward transconductance amplifier (CBTA)active networks
collection DOAJ
language English
format Article
sources DOAJ
author U. E. Ayten
M. Sagbas
N. Herencsar
J. Koton
spellingShingle U. E. Ayten
M. Sagbas
N. Herencsar
J. Koton
Novel Floating General Element Simulators Using CBTA
Radioengineering
Frequency dependent negative resistor (FDNR)
floating inductor
capacitance multiplier
floating element simulator circuit
current backward transconductance amplifier (CBTA)
active networks
author_facet U. E. Ayten
M. Sagbas
N. Herencsar
J. Koton
author_sort U. E. Ayten
title Novel Floating General Element Simulators Using CBTA
title_short Novel Floating General Element Simulators Using CBTA
title_full Novel Floating General Element Simulators Using CBTA
title_fullStr Novel Floating General Element Simulators Using CBTA
title_full_unstemmed Novel Floating General Element Simulators Using CBTA
title_sort novel floating general element simulators using cbta
publisher Spolecnost pro radioelektronicke inzenyrstvi
series Radioengineering
issn 1210-2512
publishDate 2012-04-01
description In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using PSPICE simulation for 0.25 μm, level 7, TSMC CMOS technology parameters.
topic Frequency dependent negative resistor (FDNR)
floating inductor
capacitance multiplier
floating element simulator circuit
current backward transconductance amplifier (CBTA)
active networks
url http://www.radioeng.cz/fulltexts/2012/12_01_0011_0019.pdf
work_keys_str_mv AT ueayten novelfloatinggeneralelementsimulatorsusingcbta
AT msagbas novelfloatinggeneralelementsimulatorsusingcbta
AT nherencsar novelfloatinggeneralelementsimulatorsusingcbta
AT jkoton novelfloatinggeneralelementsimulatorsusingcbta
_version_ 1725248166126682112