Crystal structure and optical performance in bulk γ-InSe single crystals

High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be...

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Main Authors:	Min Wu, Qiyun Xie, Yizhang Wu, Jiajin Zheng, Wei Wang, Liang He, Xiaoshan Wu, Bin Lv
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5086492

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spelling	doaj-f605d802a6fb41a29a83094bb3b8a2032020-11-24T23:59:33ZengAIP Publishing LLCAIP Advances2158-32262019-02-0192025013025013-610.1063/1.5086492024902ADVCrystal structure and optical performance in bulk γ-InSe single crystalsMin Wu0Qiyun Xie1Yizhang Wu2Jiajin Zheng3Wei Wang4Liang He5Xiaoshan Wu6Bin Lv7Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing University of Posts & Telecommunications, Nanjing 210023, ChinaKey Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing University of Posts & Telecommunications, Nanjing 210023, ChinaNational Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, ChinaKey Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing University of Posts & Telecommunications, Nanjing 210023, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, ChinaDepartment of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, ChinaHigh purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be explained in terms of self-energy and the lattice parameter change induced variation of band gap, respectively. Moreover, bulk InSe exhibits photoresponsivity in a wide spectrum from 400 to 990 nm. The maximum photoresponsivity reaches up to 8.82 mA/W under the wavelength of 800 nm, which is consistent with high absorption at the wavelength.http://dx.doi.org/10.1063/1.5086492
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Min Wu Qiyun Xie Yizhang Wu Jiajin Zheng Wei Wang Liang He Xiaoshan Wu Bin Lv
spellingShingle	Min Wu Qiyun Xie Yizhang Wu Jiajin Zheng Wei Wang Liang He Xiaoshan Wu Bin Lv Crystal structure and optical performance in bulk γ-InSe single crystals AIP Advances
author_facet	Min Wu Qiyun Xie Yizhang Wu Jiajin Zheng Wei Wang Liang He Xiaoshan Wu Bin Lv
author_sort	Min Wu
title	Crystal structure and optical performance in bulk γ-InSe single crystals
title_short	Crystal structure and optical performance in bulk γ-InSe single crystals
title_full	Crystal structure and optical performance in bulk γ-InSe single crystals
title_fullStr	Crystal structure and optical performance in bulk γ-InSe single crystals
title_full_unstemmed	Crystal structure and optical performance in bulk γ-InSe single crystals
title_sort	crystal structure and optical performance in bulk γ-inse single crystals
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2019-02-01
description	High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be explained in terms of self-energy and the lattice parameter change induced variation of band gap, respectively. Moreover, bulk InSe exhibits photoresponsivity in a wide spectrum from 400 to 990 nm. The maximum photoresponsivity reaches up to 8.82 mA/W under the wavelength of 800 nm, which is consistent with high absorption at the wavelength.
url	http://dx.doi.org/10.1063/1.5086492
work_keys_str_mv	AT minwu crystalstructureandopticalperformanceinbulkginsesinglecrystals AT qiyunxie crystalstructureandopticalperformanceinbulkginsesinglecrystals AT yizhangwu crystalstructureandopticalperformanceinbulkginsesinglecrystals AT jiajinzheng crystalstructureandopticalperformanceinbulkginsesinglecrystals AT weiwang crystalstructureandopticalperformanceinbulkginsesinglecrystals AT lianghe crystalstructureandopticalperformanceinbulkginsesinglecrystals AT xiaoshanwu crystalstructureandopticalperformanceinbulkginsesinglecrystals AT binlv crystalstructureandopticalperformanceinbulkginsesinglecrystals
_version_	1725447448068882432

Crystal structure and optical performance in bulk γ-InSe single crystals

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