Crystal structure and optical performance in bulk γ-InSe single crystals

High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be...

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Bibliographic Details
Main Authors: Min Wu, Qiyun Xie, Yizhang Wu, Jiajin Zheng, Wei Wang, Liang He, Xiaoshan Wu, Bin Lv
Format: Article
Language:English
Published: AIP Publishing LLC 2019-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5086492
Description
Summary:High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be explained in terms of self-energy and the lattice parameter change induced variation of band gap, respectively. Moreover, bulk InSe exhibits photoresponsivity in a wide spectrum from 400 to 990 nm. The maximum photoresponsivity reaches up to 8.82 mA/W under the wavelength of 800 nm, which is consistent with high absorption at the wavelength.
ISSN:2158-3226