Study of patterned GaAsSbN nanowires using sigmoidal model

• Main Authors: Sean Johnson, Rabin Pokharel, Michael Lowe, Hirandeep Kuchoor, Surya Nalamati, Klinton Davis, Hemali Rathnayake, Shanthi Iyer
• Format: Article
• Language: English
• Published: Nature Publishing Group 2021-02-01
• Series: Scientific Reports
• Online Access: https://doi.org/10.1038/s41598-021-83973-9

Abstract This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200–1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III–V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.