Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

Abstract Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. I...

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Bibliographic Details
Main Authors: Ye Yu, Tao Wang, Xiufang Chen, Lidong Zhang, Yang Wang, Yunfei Niu, Jiaqi Yu, Haotian Ma, Xiaomeng Li, Fang Liu, Gaoqiang Deng, Zhifeng Shi, Baolin Zhang, Xinqiang Wang, Yuantao Zhang
Format: Article
Language:English
Published: Nature Publishing Group 2021-06-01
Series:Light: Science & Applications
Online Access:https://doi.org/10.1038/s41377-021-00560-3

Internet

https://doi.org/10.1038/s41377-021-00560-3

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