Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Abstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that th...

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Main Authors: Horácio Coelho-Júnior, Bruno G. Silva, Cilene Labre, Renan P. Loreto, Rubem L. Sommer
Format: Article
Language:English
Published: Nature Publishing Group 2021-02-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-82845-6
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spelling doaj-f4fb5b6097fa486c90f44ec1e600f3b82021-02-07T12:33:00ZengNature Publishing GroupScientific Reports2045-23222021-02-011111610.1038/s41598-021-82845-6Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbonHorácio Coelho-Júnior0Bruno G. Silva1Cilene Labre2Renan P. Loreto3Rubem L. Sommer4Brazilian Center for Physics ResearchBrazilian Center for Physics ResearchBrazilian Center for Physics ResearchBrazilian Center for Physics ResearchBrazilian Center for Physics ResearchAbstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.https://doi.org/10.1038/s41598-021-82845-6
collection DOAJ
language English
format Article
sources DOAJ
author Horácio Coelho-Júnior
Bruno G. Silva
Cilene Labre
Renan P. Loreto
Rubem L. Sommer
spellingShingle Horácio Coelho-Júnior
Bruno G. Silva
Cilene Labre
Renan P. Loreto
Rubem L. Sommer
Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
Scientific Reports
author_facet Horácio Coelho-Júnior
Bruno G. Silva
Cilene Labre
Renan P. Loreto
Rubem L. Sommer
author_sort Horácio Coelho-Júnior
title Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_short Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_full Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_fullStr Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_full_unstemmed Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon
title_sort room-temperature synthesis of earth-abundant semiconductor znsin2 on amorphous carbon
publisher Nature Publishing Group
series Scientific Reports
issn 2045-2322
publishDate 2021-02-01
description Abstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.
url https://doi.org/10.1038/s41598-021-82845-6
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AT brunogsilva roomtemperaturesynthesisofearthabundantsemiconductorznsin2onamorphouscarbon
AT cilenelabre roomtemperaturesynthesisofearthabundantsemiconductorznsin2onamorphouscarbon
AT renanploreto roomtemperaturesynthesisofearthabundantsemiconductorznsin2onamorphouscarbon
AT rubemlsommer roomtemperaturesynthesisofearthabundantsemiconductorznsin2onamorphouscarbon
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