Room-temperature synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon

Abstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that th...

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Bibliographic Details
Main Authors: Horácio Coelho-Júnior, Bruno G. Silva, Cilene Labre, Renan P. Loreto, Rubem L. Sommer
Format: Article
Language:English
Published: Nature Publishing Group 2021-02-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-82845-6
Description
Summary:Abstract This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.
ISSN:2045-2322