| Summary: | To quantitatively characterize the pyramidal texture of monocrystalline silicon cells and to optimize the parameters of the texturing process, the relative standard deviation <i>S</i><sub>h</sub> was proposed to quantitatively characterize the uniformity of the pyramidal texture. Referring to the definition and calculation of the standard deviation in mathematical statistics, <i>S</i><sub>h</sub> was defined as the standard deviation of the pyramid relative height h<sub>i</sub> after normalization of the pyramid height H<sub>i</sub> of monocrystalline silicon wafer surfaces. Six different silicon cells, with different pyramidal textures, were obtained by applying different texturing times. The relationships between <i>S</i><sub>h</sub> and the photoelectric characteristics were analyzed. The feasibility of quantitatively characterizing the uniformity of the pyramidal texture using <i>S</i><sub>h</sub> was verified. By fitting the <i>S</i><sub>h</sub> curve, the feasibility of optimizing the texturing process parameters and predicting the photoelectric characteristics using <i>S</i><sub>h</sub> was verified. The experimental and analytical results indicate that, when the relative standard deviation <i>S</i><sub>h</sub> was smaller, the uniformity of the pyramidal texture obtained by texturing was better. The photoelectric conversion efficiency (PCE) of the silicon cells monotonically increased with decreasing <i>S</i><sub>h</sub>. The silicon cell obtained by texturing with 2% tetramethylammonium hydroxide (TMAH) solution for 18.1 min had a textured surface with a minimum of <i>S</i><sub>h</sub>, the reflectivity of the silicon cell reached its minimum value of 2.28%, and the PCE reached its maximum value of 19.76%.
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