Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering

Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering

Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si–Ge interface with a focus on the ro...

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Main Authors: Jesse Maassen, Vahid Askarpour
Format: Article
Language:English
Published: AIP Publishing LLC 2019-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5051538
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spelling doaj-f4c3c6a6e366407fa32886de58ca02782020-11-25T00:42:01ZengAIP Publishing LLCAPL Materials2166-532X2019-01-0171013203013203-910.1063/1.5051538003993APMPhonon transport across a Si–Ge interface: The role of inelastic bulk scatteringJesse Maassen0Vahid Askarpour1Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia B3H 4R2, CanadaDepartment of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova Scotia B3H 4R2, CanadaUnderstanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si–Ge interface with a focus on the role of inelastic bulk phonon processes. We observe significant inelastic scattering near the interface that redistributes the heat among the phonons as a result of non-equilibrium effects driven by the junction. These effects are most pronounced when the length of the junction is comparable to the average phonon mean-free-path. What controls these inelastic processes is elucidated.http://dx.doi.org/10.1063/1.5051538
collection DOAJ
language English
format Article
sources DOAJ
author Jesse Maassen
Vahid Askarpour
spellingShingle Jesse Maassen
Vahid Askarpour
Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
APL Materials
author_facet Jesse Maassen
Vahid Askarpour
author_sort Jesse Maassen
title Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
title_short Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
title_full Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
title_fullStr Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
title_full_unstemmed Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
title_sort phonon transport across a si–ge interface: the role of inelastic bulk scattering
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2019-01-01
description Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si–Ge interface with a focus on the role of inelastic bulk phonon processes. We observe significant inelastic scattering near the interface that redistributes the heat among the phonons as a result of non-equilibrium effects driven by the junction. These effects are most pronounced when the length of the junction is comparable to the average phonon mean-free-path. What controls these inelastic processes is elucidated.
url http://dx.doi.org/10.1063/1.5051538
work_keys_str_mv AT jessemaassen phonontransportacrossasigeinterfacetheroleofinelasticbulkscattering
AT vahidaskarpour phonontransportacrossasigeinterfacetheroleofinelasticbulkscattering
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