Phonon transport across a Si–Ge interface: The role of inelastic bulk scattering
Understanding phonon transport across heterojunctions is important to achieve a wide range of thermal transport properties. Using the McKelvey-Shockley flux method with first-principles modeling, we theoretically investigate the phonon transport properties of a Si–Ge interface with a focus on the ro...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-01-01
|
| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5051538 |