Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories

Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories

In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films were investigated. All the RRAM structures made in this work showed stable res...

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Main Authors: Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen
Format: Article
Language:English
Published: MDPI AG 2019-06-01
Series:Crystals
Subjects:
resistive random access memory (RRAM)
bipolar resistive switching behavior
thin films
electrical conduction mechanism
Online Access:https://www.mdpi.com/2073-4352/9/6/318
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spelling doaj-f4a8ce9ee5ea45509a58d0e0809e2ab12020-11-25T01:16:08ZengMDPI AGCrystals2073-43522019-06-019631810.3390/cryst9060318cryst9060318Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access MemoriesJian-Yang Lin0Kuang-Yao Wu1Kai-Huang Chen2Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 640, TaiwanGraduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliou, Yunlin 640, TaiwanDepartment of Digital Game and Animation Design, Tung Fang Design University, No.110, Dongfang Rd., Hunei Dist., Kaohsiung City 82941, TaiwanIn this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (R<sub>HRS</sub>/R<sub>LRS</sub>) ratio of the RRAM device containing a V<sub>2</sub>O<sub>5</sub>/Sm<sub>2</sub>O<sub>3</sub> bilayer is one order of magnitude higher than that of the devices containing a single layer of V<sub>2</sub>O<sub>5</sub> or Sm<sub>2</sub>O<sub>3</sub>. We also found that the stacking sequence of the Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.https://www.mdpi.com/2073-4352/9/6/318resistive random access memory (RRAM)bipolar resistive switching behaviorthin filmselectrical conduction mechanism
collection DOAJ
language English
format Article
sources DOAJ
author Jian-Yang Lin
Kuang-Yao Wu
Kai-Huang Chen
spellingShingle Jian-Yang Lin
Kuang-Yao Wu
Kai-Huang Chen
Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories
Crystals
resistive random access memory (RRAM)
bipolar resistive switching behavior
thin films
electrical conduction mechanism
author_facet Jian-Yang Lin
Kuang-Yao Wu
Kai-Huang Chen
author_sort Jian-Yang Lin
title Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories
title_short Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories
title_full Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories
title_fullStr Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories
title_full_unstemmed Effects of Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> Film Stacking on Switching Behaviors of Resistive Random Access Memories
title_sort effects of sm<sub>2</sub>o<sub>3</sub> and v<sub>2</sub>o<sub>5</sub> film stacking on switching behaviors of resistive random access memories
publisher MDPI AG
series Crystals
issn 2073-4352
publishDate 2019-06-01
description In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (R<sub>HRS</sub>/R<sub>LRS</sub>) ratio of the RRAM device containing a V<sub>2</sub>O<sub>5</sub>/Sm<sub>2</sub>O<sub>3</sub> bilayer is one order of magnitude higher than that of the devices containing a single layer of V<sub>2</sub>O<sub>5</sub> or Sm<sub>2</sub>O<sub>3</sub>. We also found that the stacking sequence of the Sm<sub>2</sub>O<sub>3</sub> and V<sub>2</sub>O<sub>5</sub> films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.
topic resistive random access memory (RRAM)
bipolar resistive switching behavior
thin films
electrical conduction mechanism
url https://www.mdpi.com/2073-4352/9/6/318
work_keys_str_mv AT jianyanglin effectsofsmsub2subosub3subandvsub2subosub5subfilmstackingonswitchingbehaviorsofresistiverandomaccessmemories
AT kuangyaowu effectsofsmsub2subosub3subandvsub2subosub5subfilmstackingonswitchingbehaviorsofresistiverandomaccessmemories
AT kaihuangchen effectsofsmsub2subosub3subandvsub2subosub5subfilmstackingonswitchingbehaviorsofresistiverandomaccessmemories
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