Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (P<sub>out</sub>). The short-circuit current density (J<sub>SC</sub>) and open-circuit vo...

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Bibliographic Details
Main Authors: Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung-Hee Lee, Dong-Seok Kim
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Micromachines
Subjects:
betavoltaic cell
Gallium Nitride (GaN)
high-output power
TCAD simulation
Online Access:https://www.mdpi.com/2072-666X/11/12/1100

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