Near-Infrared All-Silicon Photodetectors

Near-Infrared All-Silicon Photodetectors

We report the fabrication and characterization of all-silicon photodetectors at 1550 nm based on the internal photoemission effect. We investigated two types of structures: bulk and integrated devices. The former are constituted by a Fabry-Perot microcavity incorporating a Schottky diode, and their...

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Bibliographic Details
Main Authors:	M. Casalino, G. Coppola, M. Iodice, I. Rendina, L. Sirleto
Format:	Article
Language:	English
Published:	Hindawi Limited 2012-01-01
Series:	International Journal of Photoenergy
Online Access:	http://dx.doi.org/10.1155/2012/139278

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