Mastering the Art of High Mobility Material Integration on Si: A Path towards Power-Efficient CMOS and Functional Scaling
In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed for both density scaling (“more Moore”)...
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| Format: | Article |
| Language: | English |
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MDPI AG
2016-06-01
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| Series: | Journal of Low Power Electronics and Applications |
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| Online Access: | http://www.mdpi.com/2079-9268/6/2/9 |