Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices

Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices

The massively parallel computing capabilities of the human brain can be mimicked with the help of neuromorphic computing approach and this can be achieved by developing the electronic synaptic device. In the present work, we have synthesized gallium-doped ZnO thin films using a cost-effective hydrot...

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Bibliographic Details
Main Authors: Shilpa S. More, Pratiksha A. Patil, Kalyani D. Kadam, Harshada S. Patil, Snehal L. Patil, Aishwarya V. Pawar, Sharon S. Kanapally, Dhanashri V. Desai, Shraddha M. Bodake, Rajanish K. Kamat, Sungjun Kim, Tukaram D. Dongale
Format: Article
Language:English
Published: Elsevier 2019-03-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379719302128

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http://www.sciencedirect.com/science/article/pii/S2211379719302128

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