Effects of Al2O3 gate insulator on the instability of amorphous indium-gallium zinc oxide thin film transistors
This study analyzes bottom-gated amorphous indium-gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with different gate insulators of Si3N4 and Si3N4/Al2O3. The aim is to investigate the effect of Al2O3 on the instability of IGZO TFTs with respect to native point defects. Although the DC prop...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5043340 |